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IRHNJ67130 Datasheet

  • IRHNJ67130

  • 100V, N-CHANNEL

  • 8頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD-95816A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ67130 100K Rads (Si)
IRHNJ63130 300K Rads (Si)
R
DS(on)
0.042鈩?/div>
0.042鈩?/div>
I
D
22A*
22A*
IRHNJ67130
100V, N-CHANNEL
TECHNOLOGY
SMD-0.5
International Rectifier鈥檚 R6 technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm
2
).
TM
Features:
n
n
n
n
n
n
n
n
n
n
Their combination of very low
RDS(on)
and faster
switching times reduces power loss and increases
power density in today鈥檚 high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
脌
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
22*
19
88
75
0.6
鹵20
73
22
7.5
3.8
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0 (Typical)
g
www.irf.com
1
02/18/05

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