IRHNJ4130 Datasheet

IC型號(hào)：
IRHNJ4130
PDF描述：
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
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PD - 93820

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number Radiation Level

IRHNJ7130 100K Rads (Si)

IRHNJ3130 300K Rads (Si)

IRHNJ4130

600K Rads (Si)

IRHNJ8130 1000K Rads (Si)

DS(on)

0.18鈩?/div>

14.4A

IRHNJ7130

100V, N-CHANNEL

RAD-Hard HEXFET

MOSFET TECHNOLOGY

鈩?/div>

廬

SMD-0.5

International Rectifier鈥檚 RAD-Hard

HEXFET

廬

MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low R

DS(on)

and low gate charge reduces

the power losses in switching applications such as DC

to DC converters and motor control. These devices re-

tain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of parallel-

ing and temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25擄C

ID @ VGS = 12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

聦

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

聦

Repetitive Avalanche Energy

聦

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

14.4

9.1

0.6

鹵20

150

聧

14.4

7.5

6.0

聨

-55 to 150

Pre-Irradiation

Units

W/擄C

V/ns

For footnotes refer to the last page

www.irf.com

2/4/00

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