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IRHNB8064 Datasheet

  • IRHNB8064

  • 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in ...

  • 139.17KB

  • 8頁

  • ETC

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PD - 91737
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
廬
TRANSISTOR
IRHNB7064
IRHNB8064
N-CHANNEL
MEGA RAD HARD
60Volt, 0.015鈩? MEGA RAD HARD HEXFET
鈩?/div>
International Rectifier鈥檚 RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier鈥檚 RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the RAD
HARD process utilizes International Rectifier鈥檚 pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Product Summary
Part Number
IRHNB7064
IRHNB8064
BV
DSS
60V
60V
R
DS(on)
0.015鈩?/div>
0.015鈩?/div>
I
D
75*A
75*A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
75*
56
356
300
2.4
鹵20
500
75*
30
2.5
-55 to 150
Pre-Irradiation
IRHNB7064, IRHNB8064
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300( for 5 sec.)
3.5 (typical)
g
www.irf.com
1
8/25/98

IRHNB8064相關(guān)型號PDF文件下載

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  • 英文版
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  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
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  • 英文版
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    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
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  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
    IRF [Inter...
  • 英文版
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