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IRHNB7360SE Datasheet

  • IRHNB7360SE

  • 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in ...

  • 8頁

  • ETC

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PD - 91740B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
Product Summary
Part Number
IRHNB7360SE
Radiation Level R
DS(on)
100K Rads (Si)
0.20鈩?/div>
I
D
24A
IRHNB7360SE
400V, N-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
聶
廬
SMD-3
International Rectifier聮s RADHard
TM
HEXFET
廬
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
24
15
96
300
2.4
鹵20
500
24
30
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
3.0
-55 to 150
300 (for 5 sec.)
3.5 (Typical)
C
g
www.irf.com
1
6/4/01

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