鈩?/div>
International Rectifier鈥檚 P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 3 X 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier鈥檚 P-Channel
RAD HARD HEXFETs retain
identical
electrical specifica-
tions up to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also ca-
pable of surviving transient ionization pulses as high as 1 x
10
12
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Single Event Effect (SEE) testing of In-
ternational Rectifier P-Channel RAD HARD HEXFETs has
demonstrated immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier鈥檚 pat-
ented HEXFET technology, the user can expect the highest
quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
IRHNA9064
IRHNA93064
JANSR2N7424U
JANSF2N7424U
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHNA9064
IRHNA93064
BV
DSS
-60V
-60V
R
DS(on)
0.045鈩?/div>
0.045鈩?/div>
I
D
-48A
-48A
Features:
!
!
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!
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Radiation Hardened up to 3 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25擄C Continuous Drain Current
ID @ VGS = -12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
"
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
#
Avalanche Current
"
Repetitive Avalanche Energy
"
Peak Diode Recovery dv/dt
$
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
-48
-30
-192
300
2.4
鹵20
500
-48
30
4.4
-55 to 150
Pre-Irradiation
IRHNA9064, IRHNA93064
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5 Sec.)
3.3 (typical)
g
www.irf.com
1
8/25/98
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