Provisional Data Sheet No. PD-9.1433
鈩?/div>
International Rectifier鈥檚 P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
rads (Si). Under
identical
pre- and post-radiation
test conditions, International Rectifier鈥檚 P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications
up to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier鈥檚 P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the RAD HARD
process utilizes International Rectifier鈥檚 patented HEXFET
technology, the user can expect the highest quality and reli-
ability in the industry.
P- Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters. They are
well-suited for applications such as switching power sup-
plies, motor controls, inverters, choppers, audio amplifiers
and high-energy pulse circuits in space and weapons envi-
ronments.
Product Summary
Part Number
IRHNA9160
BV
DSS
-100V
R
DS(on)
0.087鈩?/div>
I
D
-38A
Features:
s
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25 C Continuous Drain Current
I D @ VGS = -12V, TC = 100
o
C Continuous Drain Current
IDM
PD @ TC = 25
o
C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
聦
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
o
Pre-Radiation
IRHNA9160
-38
-24
-152
300
2.4
鹵20
500
-38
30
-5.5
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
g
To Order
1
2
3
4
