Provisional Data Sheet No. PD-9.1396
鈩?/div>
International Rectifier鈥檚 RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier鈥檚 RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier鈥檚 patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
IRHNA7160
IRHNA8160
BV
DSS
100V
100V
R
DS(on)
0.045鈩?/div>
0.045鈩?/div>
I
D
51A
51A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
51
32.5
204
300
2.0
鹵20
500
51
30
5.5
-55 to 150
Pre-Radiation
IRHNA7160, IRHNA8160
Units
A
W
W/K
聟
V
mJ
A
mJ
V/ns
o
C
300 (for 5 sec.)
3.3 (typical)
g
To Order
1
2
3
4
