PD - 91701B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
廬
TRANSISTOR
30 Volt, 0.009W , RAD HARD HEXFET
W
International Rectifier鈥檚 RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Addi-
tionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier鈥檚 RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier鈥檚 patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and temperature
stability of the electrical parameters. They are well-suited for
applications such as switching power supplies, motor con-
trols, inverters, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
IRHNA7Z60
IRHNA8Z60
N-CHANNEL
MEGA RAD HARD
Product Summary
Part Number
IRHNA7Z60
IRHNA8Z60
BV
DSS
30V
30V
R
DS(on)
0.009W
0.009W
I
D
75*A
75*A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
LightWeight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25擄C
ID @ VGS = -12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Package Mounting surface Temperature
Weight
75*
75*
300
300
2.4
鹵 20
500
75
30
0.35
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Pre-Irradiation
IRHNA7Z60, IRHNA8Z60
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
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