Provisional Data Sheet No. PD-9.1432A
鈩?/div>
International Rectifier鈥檚 (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under
identical
pre- and post-radiation test
conditions, International Rectifier鈥檚 RAD HARD HEXFETs
retain
identical
electrical specifications up to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive cir-
cuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Since the SEE process utilizes In-
ternational Rectifier鈥檚 patented HEXFET technology, the
user can expect the highest quality and reliability in the
industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Part Number
IRHNA7264SE
BV
DSS
250V
R
DS(on)
0.110鈩?/div>
I
D
34A
Features:
s
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Product Summary
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25 C
ID @ VGS = 12V, TC = 100
o
C
IDM
PD @ TC = 25
o
C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
o
Pre-Radiation
IRHNA7264SE
34
21
136
300
2.4
鹵20
500
34
30
4.0
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聦
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
g
To Order
1
2
3
4
