Provisional Data Sheet No. PD - 9.885B
鈩?/div>
International Rectifier鈥檚 P-Channel RAD HARD tech-
nology HEXFETs demonstrate excellent threshold
voltage stability at total radiation doses as high as 3
x 10
5
Rads (Si). Under
identical
pre- and post-radia-
tion test conditions, International Rectifier鈥檚 P-Chan-
nel RAD HARD HEXFETs retain
identical
electrical
specifications up to 1 x 10
5
Rads (Si) total dose. No
compensation in gate drive circuitry is required. These
devices are also capable of surviving transient ion-
ization pulses as high as 1 x 10
12
Rads (Si)/Sec, and
return to normal operation within a few microseconds.
Since the SEE process utilizes International Rectifier鈥檚
patented HEXFET technology, the user can expect
the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
IRHN9150
IRHN93150
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHN9150
IRHN93150
BV
DSS
-100V
-100V
R
DS(on)
0.075鈩?/div>
0.075鈩?/div>
I
D
-22A
-22A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 3 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25擄C
ID @ VGS = -12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pre-Radiation
IRHN9150, IRHN93150
-22
-14
-88
150
1.2
鹵20
500
-22
15
-23
-55 to 150
o
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
A
W
W/K
聟
V
mJ
A
mJ
V/ns
C
300 (0.063 in. (1.6mm) from
case for 10 sec.)
2.6 (typical)
g
11/4/97
1
2
3
4
5
6
7
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