Provisional Data Sheet No. PD-9.886
鈩?/div>
International Rectifier鈥檚 P-channel RAD HARD tech-
nology HEXFETs demonstrate excellent threshold
voltage stability and breakdown voltage stability at
total radiation doses as high as 10
5
Rads (Si). Under
identical
pre- and post-radiation test conditions, In-
ternational Rectifier鈥檚 P-channel RAD HARD HEXFETs
retain
identical
electrical specifications up to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x
10
12
Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect, (SEE),
testing of International Rectifier 鈥檚 P-channel RAD
HARD HEXFETs has demonstrated virtual immunity
to SEE failure. Since the P-channel RAD HARD pro-
cess utilizes International Rectifier鈥檚 patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
P-channel RAD HARD HEXFET transistors also fea-
ture all of the well-established advantages of MOS-
FETs, such as voltage control, very fast switching, ease
of paralleling and temperature stability of the electri-
cal parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
廬
IRHN9130
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHN9130
BV
DSS
-100V
R
DS(on)
0.30鈩?/div>
I
D
-11A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
I D @ VGS = -12V, TC = 25擄C
Continuous Drain Current
ID @ VGS = -12V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
脌
PD @ TC = 25擄C
Max. Power Dissipation
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Package Mount Surface Temperature
Weight
Pre-Radiation
IRHN9130
-11
-7.0
-44
75
0.60
鹵20
500
-11
7.5
-5.5
-55 to 150
o
Units
A
W
W/K
脛
V
mJ
A
mJ
V/ns
300 (for 5 seconds)
2.6 (typical)
C
g
To Order
1
2
3
4
