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IRHN7054 Datasheet

  • IRHN7054

  • 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a...

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PD - 90884B
RADIATION HARDENED
POWER MOSFET
S URFACE MOUNT (SMD-1)
Product Summary
Part Number Radiation Level
IRHN7054
100K Rads (Si)
IRHN3054
300K Rads (Si)
IRHN4054
600K Rads (Si)
IRHN8054
1000K Rads (Si)
R
DS(on)
0.027鈩?/div>
0.027鈩?/div>
0.027鈩?/div>
0.027鈩?/div>
I
D
35A
35A
35A
35A
IRHN7054
JANSR2N7394U
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard HEXFET
TECHNOLOGY
聶
廬
QPL Part Number
JANSR2N7394U
JANSF2N7394U
JANSG2N7394U
JANSH2N7394U
SMD-1
International Rectifier聮s RADHard HEXFET
廬
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
35
30
283
150
1.2
鹵20
500
35
15
3.5
-55 to 150
300 (5sec)
2.6 (Typical )
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
8/9/01

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