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IRHMS57264SE Datasheet

  • IRHMS57264SE

  • RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254A...

  • 8頁

  • IRF

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PD-95871
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number
IRHMS57264SE
Radiation Level
100K Rads (Si)
R
DS(on)
0.061鈩?/div>
IRHMS57264SE
JANSR2N7477T1
250V, N-CHANNEL
REF: MIL-PRF-19500/685
5

TECHNOLOGY
聶
I
D
QPL Part Number
37A JANSR2N7477T1
Low-Ohmic
TO-254AA
International Rectifier鈥檚 R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
37
23.5
148
208
1.67
鹵20
258
37
20.8
14
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
g
www.irf.com
1
11/01/04

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