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IRHM93260 Datasheet

  • IRHM93260

  • -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in...

  • 8頁

  • ETC

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PD - 93858
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM9260
100K Rads (Si)
IRHM93260
300K Rads (Si)
R
DS(on)
0.160鈩?/div>
0.160鈩?/div>
IRHM9260
JANSR2N7426
200V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard
鈩?/div>
HEXFET
TECHNOLOGY
廬
I
D
QPL Part Number
-27A JANSR2N7426
-27A JANSF2N7426
TO-254AA
International Rectifier鈥檚 RAD-Hard
TM
HEXFET
廬
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25擄C Continuous Drain Current
ID @ VGS = -12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-27
-17
-108
250
2.0
鹵20
500
-27
25
-9.0
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
11/27/00

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