鈩?/div>
International Rectifier鈥檚 P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 3 X 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier鈥檚 P-Channel
RAD HARD HEXFETs retain
identical
electrical specifica-
tions up to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also ca-
pable of surviving transient ionization pulses as high as 1 x
10
12
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Single Event Effect (SEE) testing of In-
ternational Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier鈥檚
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power sup-
plies, motor controls, inverters, choppers, audio amplifiers
and high-energy pulse circuits in space and weapons
environments.
IRHM9130
IRHM93130
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHM9130
IRHM93130
BV
DSS
-100V
-100V
R
DS(on)
0.3鈩?/div>
0.3鈩?/div>
I
D
-11A
-11A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 3 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25擄C
ID @ VGS = -12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-11
-7.0
-44
75
0.6
鹵 20
190
-11
7.5
-10
-55 to 150
Pre-Irradiation
IRHM9130, IRHM93130
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
300 (0.063 in. (1.6mm) from case for 10s
9.3 (typical)
o
C
1
1/6/99
g
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