Provisional Data Sheet No. PD-9.1564
鈩?/div>
International Rectifier鈥檚 RAD HARD technology HEXFETs
demonstrate virtual immunity to SEE failure. Addition-
ally, under
identical
pre- and post-radiation test condi-
tions, International Rectifier鈥檚 RAD HARD HEXFETs
retain
identical
electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry is
required. These devices are also capable of surviving
transient ionization pulses as high as 1 x 10
12
Rads (Si)/
Sec, and return to normal operation within a few micro-
seconds. Since the RAD HARD process utilizes Interna-
tional Rectifier鈥檚 patented HEXFET technology, the user
can expect the highest quality and reliability in the indus-
try.
RAD HARD HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
IRHM7064
IRHM8064
BV
DSS
60V
60V
R
DS(on)
0.021鈩?/div>
0.021鈩?/div>
I
D
35A*
35A*
Features:
s
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
I D @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聦
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Notes: See page 4
Pre-Radiation
IRHM7064, IRHM8064
35*
35*
284
250
2.0
鹵20
500
35
25
4.5
-55 to 150
300 (0.063 in (1.6mm) from case for 10 sec.)
9.3 (typical)
Units
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
g
To Order
*Current is limited by pin diameter
1
2
3
4
