Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1394A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
廬
IRHM7460SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.32鈩? (SEE) RAD HARD HEXFET
International Rectifier鈥檚 (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier鈥檚 RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier鈥檚 patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Part Number
IRHM7460SE
BV
DSS
500V
R
DS(on)
0.32鈩?/div>
I
D
18.8A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
I D @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
18.8
11.9
75.2
250
2.0
鹵20
500
18.8
25
3.5
-55 to 150
Pre-Radiation
IRHM7460SE
Units
A
W
W/K
聟
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6 mm) from case for 10s)
9.3 (typical)
g
To Order
1
2
3
4
