Provisional Data Sheet No. PD-9.1393A
鈩?/div>
International Rectifier鈥檚 (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier鈥檚 RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier鈥檚 patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
廬
Product Summary
Part Number
IRHM726SE
BV
DSS
250V
R
DS(on)
0.087鈩?/div>
I
D
35A*
Features:
s
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ V GS = 12V, TC = 25擄C Continuous Drain Current
I D @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聦
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Notes: See Page 4. ID current limited by pin diameter
IRHM7264SE
35*
22.8
140
250
2.0
鹵20
500
35*
25
4.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
Units
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
g
*
To Order
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