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IRHLF670Z4 Datasheet

  • IRHLF670Z4

  • RADIATION HARDENED LOGIC LEVEL POWER MOSFET

  • 150.26KB

  • 8頁

  • IRF

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PD - 94695
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level R
DS(on)
IRHLF670Z4 100K Rads (Si)
0.5鈩?/div>
IRHLF630Z4 300K Rads (Si)
0.5鈩?/div>
IRHLF640Z4
IRHLF680Z4
600K Rads (Si)
1000K Rads (Si)
0.5鈩?/div>
0.5鈩?/div>
I
D
1.6A*
1.6A*
1.6A*
1.6A*
IRHLF670Z4
60V, N-CHANNEL
TECHNOLOGY
T0-39
International Rectifier鈥檚 R6
TM
Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLF6970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25擄C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.6*
1.0*
6.4
5.0
0.04
鹵10
9.0
1.6
0.5
3.5
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4
For footnotes refer to the last page
www.irf.com
1
07/07/03

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