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PD - 90670C

IRHG7110

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (MO-036AB)

Product Summary

Part Number Radiation Level R

DS(on)

IRHG7110

100K Rads (Si)

0.6鈩?/div>

IRHG3110

300K Rads (Si)

0.6鈩?/div>

IRHG4110

600K Rads (Si)

0.6鈩?/div>

IRHG8110

1000K Rads (Si) 0.6鈩?/div>

I

D

1.0A

100V, QUAD N-CHANNEL

RAD-Hard HEXFET

鈩?/div>

廬

MOSFET TECHNOLOGY

MO-036AB

International Rectifier鈥檚 RAD-Hard

TM

HEXFET

廬

MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low R

DS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Features:

n

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings (Per Die)

Parameter

ID @ VGS = 12V, TC = 25擄C

ID @ VGS = 12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

TJ

T STG

Continuous Drain Current

Pulsed Drain Current

鉃€

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy鉃?/div>

Avalanche Current

鉃€

Repetitive Avalanche Energy

鉃€

Peak Diode Recovery dv/dt

鉃?/div>

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

1.0

0.6

4.0

1.4

0.011

鹵20

56

1.0

0.14

2.4

-55 to 150

Pre-Irradiation

Units

A

W

W/擄C

V

mJ

A

mJ

V/ns

o

C

300 (0.63in./1.6mm from case for 10s)

1.3 (Typical)

g

www.irf.com

1

07/17/01

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