Provisional Data Sheet No. PD-9.1444
鈩?/div>
International Rectifier鈥檚 (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier鈥檚 RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier鈥檚 patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
廬
Product Summary
Part Number
IRHF7310SE
BV
DSS
400V
R
DS(on)
4.5鈩?/div>
I
D
1.15A
Features:
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ V GS = 12V, TC = 25擄C Continuous Drain Current
I D @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聦
PD @ TC = 25擄C
VGS
EAS
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from
case for 10 sec.)
0.98 (typical)
o
IRHF7310SE
1.15
0.70
4.6
15
2.0
鹵20
75
4.0
-55 to 150
Units
A
W
W/K
聬
V
mJ
V/ns
C
g
1
2
3
4
