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IRHF54130 Datasheet

  • IRHF54130

  • RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

  • 8頁

  • IRF

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PD - 93789A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57130
100K Rads (Si)
IRHF53130
300K Rads (Si)
IRHF54130
IRHF58130
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.08鈩?/div>
0.08鈩?/div>
0.08鈩?/div>
0.10鈩?/div>
I
D
11.7A
11.7A
11.7A
11.7A
IRHF57130
100V, N-CHANNEL
R
5
TECHNOLOGY
聶
TO-39
International Rectifier鈥檚 R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聦
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
11.7
7.4
47
25
0.2
鹵20
173
11.7
2.5
4.9
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
www.irf.com
1
3/2/00

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