音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRHA8260 Datasheet

  • IRHA8260

  • TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) |...

  • 8頁

  • ETC

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 91397A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
廬
TRANSISTOR
IRHNA7260
IRHNA8260
N-CHANNEL
MEGA RAD HARD
200Volt, 0.070鈩? MEGA RAD HARD HEXFET
鈩?/div>
International Rectifier鈥檚 RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier鈥檚 RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the RAD
HARD process utilizes International Rectifier鈥檚 pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments
Product Summary
Part Number
IRHNA7260
IRHNA8260
BV
DSS
200V
200V
R
DS(on)
0.070鈩?/div>
0.070鈩?/div>
I
D
43A
43A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
43
27
172
300
2.4
鹵20
500
43
30
5.7
-55 to 150
Pre-Irradiation
IRHNA7260, IRHNA8260
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5 Sec.)
3.3 (typical)
g
www.irf.com
1
8/25/98

IRHA8260相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) |...
    ETC

您可能感興趣的PDF文件資料

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！