Provisional Data Sheet No. PD-9.1392
鈩?/div>
International Rectifier鈥檚 P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier鈥檚 P-Channel
RAD HARD HEXFETs retain
identical
electrical specifications
up to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier鈥檚
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inver ters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
Product Summary
Part Number
IRH9250
BV
DSS
-200V
R
DS(on)
0.315鈩?/div>
I
D
-14A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25擄C Continuous Drain Current
I D @ VGS = -12V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聛
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Notes: See page 4
Pre-Radiation
IRH9250
-14
-9
-56
150
1.2
鹵20
500
-14
15
-5.5
-55 to 150
o
C
Units
A
W
W/K
聟
V
mJ
A
mJ
V/ns
聝
300 (0.063 in. (1 .6mm) from case for 10s)
11.5 (typical)
g
To Order
1
2
3
4
