PD - 94607A
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Maximum Junction Temperature rated at 175擄C.
G
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
C
V
CES
= 600V
I
C
= 7.6A, T
C
=100擄C
t
sc
> 10碌s, T
J
=150擄C
E
n-channel
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
V
CE(on)
typ. = 2.1V
D
2
Pak
TO-220
IRGB4B60KD1 IRGS4B60KD1
TO-262
IRGSL4B60KD1
Units
V
A
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
11
7.6
22
22
11
6.7
22
鹵20
63
31
-55 to +175
c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
V
W
P
D
@ T
C
= 100擄C Maximum Power Dissipation
擄C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient
Weight
Junction-to-Ambient (PCB Mount, steady state)
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
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Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.44
Max.
2.4
6.1
鈥撯€撯€?/div>
62
40
鈥撯€撯€?/div>
Units
擄C/W
d
g
www.irf.com
1
05/28/03
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