PD - 94383C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
V
CES
= 600V
I
C
= 15A, T
C
=100擄C
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?Low Diode VF.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Ultrasoft Diode Reverse Recovery Characteristics.
鈥?Positive VCE (on) Temperature Coefficient.
G
E
t
sc
> 10碌s, T
J
=150擄C
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.8V
TO-220AB
IRGB15B60KD
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
D
2
Pak
IRGS15B60KD
Max.
600
31
15
62
62
31
15
64
鹵 20
208
83
-55 to +150
TO-262
IRGSL15B60KD
Units
V
A
V
W
擄C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
聛
Junction-to-Ambient (PCB Mount, steady state)
聜
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.44
Max.
0.6
2.1
鈥撯€撯€?/div>
62
40
鈥撯€撯€?/div>
Units
擄C/W
g
www.irf.com
1
6/24/02
next
IRGSL15B60KD相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | 18A I(C) | TO-2...
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
-
英文版
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
IRF
-
英文版
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
IRF [Inter...