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IRGR3B60KD2PBF Datasheet

  • IRGR3B60KD2PBF

  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...

  • 314.56KB

  • 14頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 95036
IRGR3B60KD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?Low Diode VF.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Ultrasoft Diode Reverse Recovery Characteristics.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Lead-Free
V
CES
= 600V
I
C
= 4.2A, T
C
=100擄C
G
E
t
sc
> 10碌s, T
J
=150擄C
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.9V
D-Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ Tc = 25擄C
I
F
@ Tc = 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
鹵20
52
21
-55 to +150
Units
V
A
c
Diode Continous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
V
W
P
D
@ T
C
= 100擄C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
擄C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Junction-to-Ambient, (PCB Mount)
Weight
Min.
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.3
Max.
2.4
8.8
50
鈥撯€撯€?/div>
Units
擄C/W
d
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
g
www.irf.com
1
2/23/04

IRGR3B60KD2PBF 產(chǎn)品屬性

  • 75

  • 分離式半導體產(chǎn)品

  • IGBT - 單路

  • -

  • NPT

  • 600V

  • 2.4V @ 15V，3A

  • 7.8A

  • 52W

  • 標準型

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • D-Pak

  • 管件

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