PD- 95913
IRGPS60B120KDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
Motor Control Co-Pack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?Low Diode VF.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Ultrasoft Diode Reverse Recovery Characteristics.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Super-247 Package.
鈥?Lead-Free
C
V
CES
= 1200V
V
CE(on)
typ. = 2.50V
G
E
@ V
GE
= 15V,
N-channel
I
CE
= 60A, Tj=25擄C
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Significantly Less Snubber Required
鈥?Excellent Current Sharing in Parallel Operation.
Super-247鈩?/div>
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
聛
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
105聜
60
240
240
120
60
240
鹵 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Le
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
20 (2)
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
鈥撯€撯€?/div>
6.0 (0.21)
13
Max.
0.20
0.41
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
N(kgf)
g (oz)
nH
www.irf.com
1
9/22/04
IRGPS60B120KDP 產(chǎn)品屬性
25
分離式半導體產(chǎn)品
IGBT - 單路
-
NPT
1200V
2.75V @ 15V，60A
105A
595W
標準型
通孔
TO-274AA
SUPER-247（TO-274AA）
散裝
*IRGPS60B120KDP
IRGPS60B120KDP相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-2...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-2...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 70A I(C) | TO-2...
ETC
-
英文版
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
IRF [Inter...
-
英文版
PDP Switch
IRF
-
英文版
PDP Switch
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22...
IRF
1
2
3
4
5
6
7
8
9
10
11
12
