PD- 94239A
IRGPS60B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Motor Control Co-Pack IGBT
ULTRAFAST SOFT RECOVERY DIODE
C
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?Low Diode VF.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Ultrasoft Diode Reverse Recovery Characteristics.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Super-247 Package.
V
CES
= 1200V
V
CE(on)
typ. = 2.50V
G
E
@ V
GE
= 15V,
N-channel
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Significantly Less Snubber Required
鈥?Excellent Current Sharing in Parallel Operation.
I
CE
= 60A, Tj=25擄C
Super-247鈩?/div>
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
聛
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
105聜
60
240
240
120
60
240
鹵 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Le
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
20 (2)
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
鈥撯€撯€?/div>
6.0 (0.21)
13
Max.
0.20
0.41
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
N(kgf)
g (oz)
nH
www.irf.com
1
8/18/04
IRGPS60B120KD相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-2...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-2...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 70A I(C) | TO-2...
ETC
-
英文版
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
IRF [Inter...
-
英文版
PDP Switch
IRF
-
英文版
PDP Switch
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22...
IRF
1
2
3
4
5
6
7
8
9
10
11
12
