PD- 94295B
IRGPS40B120U
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast IGBT
C
Features
鈥?Non Punch Through IGBT Technology.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Super-247 Package.
V
CES
= 1200V
V
CE(on)
typ. = 3.12V
G
E
@ V
GE
= 15V,
N-channel
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Significantly Less Snubber Required
鈥?Excellent Current Sharing in Parallel Operation.
I
CE
= 40A, Tj=25擄C
Super-247鈩?/div>
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
80
40
160
160
鹵 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Le
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
20 (2)
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
鈥撯€撯€?/div>
6.0 (0.21)
13
Max.
0.20
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
N(kgf)
g (oz)
nH
www.irf.com
1
1/28/04
IRGPS40B120U相關(guān)型號PDF文件下載
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