10kHz) See Fig. 1 for Current vs. Frequency curve
鈮?/div>
2.9V
G
@V
GE
= 15V, I
C
= 25A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
45
25
90
90
16
90
鹵 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
JC
R
胃
CS
R
胃
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.24
鈥?/div>
6 (0.21)
Max.
0.64
0.83
鈥?/div>
40
鈥?/div>
Units
擄C/W
g (oz)
Revision 1
C-293
To Order
IRGPH50FD2相關(guān)型號(hào)PDF文件下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-2...
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PDP Switch
IRF
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英文版
PDP Switch
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
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英文版
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INSULATED GATE BIPOLAR TRANSISTOR
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22...
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