PD - 97208
IRGP4065PbF
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for improved panel efficiency
l
High repetitive peak current capability
l
Lead Free package
Key Parameters
V
CE
min
V
CE(ON)
typ. @ I
C
= 70A
I
RP
max @ T
C
= 25擄C
c
T
J
max
C
300
1.75
205
150
C
E
C
G
V
V
A
擄C
G
E
n-channel
G
Gate
C
Collector
TO-247AC
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150擄C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
RP
@ T
C
= 25擄C
P
D
@T
C
= 25擄C
P
D
@T
C
= 100擄C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Max.
鹵30
70
40
205
178
71
1.4
-40 to + 150
Units
V
A
W
W/擄C
擄C
Thermal Resistance
Parameter
R
胃CS
R
胃JA
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
Max.
0.80
鈥撯€撯€?/div>
40
Units
擄C/W
R
胃JC
Junction-to-Case
d
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
www.irf.com
1
05/10/06
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