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IRGP4065DPBF Datasheet

  • IRGP4065DPBF

  • PDP TRENCH IGBT

  • 7頁

  • IRF

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PD - 97101
IRGP4065DPbF
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for Improved Panel Efficiency
l
High Repetitive Peak Current Capability
l
Lead Free Package
Key Parameters
V
CE
min
V
CE(ON)
typ. @ I
C
= 70A
I
RP
max @ T
C
= 25擄C
c
T
J
max
C
300
1.75
205
150
C
V
V
A
擄C
G
E
G
E
C
n-channel
G
G ate
C
C ollector
TO-247AC
E
E m itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150擄C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
RP
@ T
C
= 25擄C
P
D
@T
C
= 25擄C
P
D
@T
C
= 100擄C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Max.
鹵30
70
40
205
160
63
1.3
-40 to + 150
Units
V
A
W
W/擄C
擄C
Thermal Resistance
Parameter
R
胃JC
(IGBT)
R
胃JC
(Diode)
R
胃CS
R
胃JA
Typ.
鈥撯€撯€?/div>
1.45
0.24
鈥撯€撯€?/div>
6.0 (0.21)
Max.
0.80
2.5
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
Thermal Resistance Junction-to-Case-(each IGBT)
d
Thermal Resistance Junction-to-Case-(each Diode)
d
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
d
Weight
擄C/W
g (oz)
www.irf.com
1
6/13/06

IRGP4065DPBF 產(chǎn)品屬性

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • 溝道

  • 300V

  • 2.1V @ 15V，70A

  • 70A

  • 160W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-247-3

  • TO-247AC

  • 散裝

IRGP4065DPBF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
    IRF [Inter...
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-2...
    ETC
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-2...
    ETC
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 70A I(C) | TO-2...
    ETC
  • 英文版
    ETC
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
    IRF [Inter...
  • 英文版
    PDP Switch
    IRF
  • 英文版
    PDP Switch
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22...
    IRF

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