鈮?/div>
5碌s, T
J(max)
= 175擄C
n-channel
C
C
V
CE(on)
typ. = 1.65V
Benefits
鈥?High Efficiency in a wide range of applications
鈥?Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
鈥?Rugged transient Performance for increased reliability
鈥?Excellent Current sharing in parallel operation
鈥?Low EMI
E
C
G
TO-220AB
E
C
G
TO-247AC
G
Gate
C
Collector
Max.
600
48
24
96
96
48
24
96
鹵20
鹵30
250
125
-55 to +175
E
Emitter
Units
V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf路in (1.1 N路m)
c
e
A
Continuous Gate-to-Emitter Voltage
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
(IGBT)
R
胃JC
(Diode)
R
胃JC
(IGBT)
R
胃JC
(Diode)
R
胃CS
R
胃JA
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance Junction-to-Case-(each Diode) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
80
Max.
0.60
1.53
0.65
1.62
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
1
www.irf.com
02/24/06
IRGP4062DPBF 產(chǎn)品屬性
25
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
-
溝道
600V
1.95V @ 15V，24A
48A
250W
標(biāo)準(zhǔn)型
通孔
TO-247-3
TO-247AC
散裝
IRGP4062DPBF相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
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