PD-95882
IRGP4050
PDP Switch
Features
摟
摟
摟
摟
摟
摟
Key parameters optimized for PDP sustain &
Energy recovery applications
104A continuous collector current
rating reduces component count
High pulse current rating makes it ideal for
capacitive load circuits
Low temperature co-efficient of V
CE (ON)
ensures
reduced power dissipation at operating junction
temperatures
Reverse voltage avalanche rating improves the
robustness in sustain driver application
Short fall & rise times for fast switching
C
V
CES
= 250V
G
E
V
CE(on) typ.
=
1.64V
@V
GE
= 15V, I
C
= 30A
n-channel
Description
This IGBT is specifically designed for sustain & energy recovery application
in plasma display panels. This IGBT features low V
CE (ON)
and fast switching
times to improve circuit efficiency and reliability. Low temperature co-efficient
of V
CE (ON)
makes this IGBT an ideal device for PDP sustain driver application.
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Max.
250
104*
56
208
290
鹵20
1240
330
130
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
脙聶
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
d
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Solder Temperature Range, for 10 sec.
e
V
mJ
W
擄C
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.38
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz.)
*Package limited to 60A.
1
www.irf.com
07/05/04
next
IRGP4050 產(chǎn)品屬性
25
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
-
-
250V
1.9V @ 15V,30A
104A
330W
標(biāo)準(zhǔn)型
通孔
TO-247-3
TO-247AC
散裝
*IRGP4050
IRGP4050相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-2...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-2...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 70A I(C) | TO-2...
ETC
-
英文版
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
IRF [Inter...
-
英文版
PDP Switch
IRF
-
英文版
PDP Switch
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22...
IRF