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IRGP30B60KD-E Datasheet

  • IRGP30B60KD-E

  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...

  • 12頁

  • IRF

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PD - 94388A
IRGP30B60KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low V
CE (on)
Non Punch Through IGBT Technology.
Low Diode V
F
.
10碌s Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive V
CE (on)
Temperature Coefficient.
TO-247AD Package
C
V
CES
= 600V
I
C
= 30A, T
C
=100擄C
G
E
t
sc
> 10碌s, T
J
=150擄C
n-channel
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
V
CE(on)
typ. = 1.95V
TO-247AD
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
聛
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
60
30
120
120
60
30
120
鹵20
304
122
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
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鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6.0
Max.
0.41
1.32
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g
www.irf.com
1
10/14/02

IRGP30B60KD-E相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
    IRF [Inter...
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-2...
    ETC
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-2...
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  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 70A I(C) | TO-2...
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  • 英文版
    ETC
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=1...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=2...
    IRF [Inter...
  • 英文版
    PDP Switch
    IRF
  • 英文版
    PDP Switch
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22...
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