PD- 94117
IRGP20B120U-E
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?UltraFast Non Punch Through (NPT)
Technology
鈥?10
碌
s Short Circuit capability
鈥?Square RBSOA
鈥?Positive V
CE
(on) Temperature Coefficient
鈥?Extended lead TO-247 package
UltraFast IGBT
C
V
CES
= 1200V
G
E
V
CE(on) typ.
=
3.05V
V
GE
= 15V, I
C
= 20A, 25擄C
Benefits
鈥?Benchmark efficiency above 20KHz
鈥?Optimized for Welding, UPS, and Induction Heating
applications
鈥?Rugged with UltraFast performance
鈥?Low EMI
鈥?Significantly Less Snubber required
鈥?Excellent Current sharing in Parallel operation
鈥?Longer leads for easier mounting
n-channel
TO-247AD
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
AS
@ T
C
=25擄C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
(Fig.1)
Continuous Collector Current
(Fig.1)
Pulsed Collector Current
(Fig.3, Fig. CT.5)
Clamped Inductive Load Current
(Fig.4, Fig. CT.2)
Gate-to-Emitter Voltage
Avalanche Energy, single pulse
I
C
= 25A, V
CC
= 50V, R
GE
= 25ohm
L = 200碌H
(Fig. CT.6)
Maximum Power Dissipation
(Fig.2)
Maximum Power Dissipation
(Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
1200
40
20
120
120
鹵 20
65
Units
V
A
V
mJ
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Z
胃JC
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
(Fig.18)
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.42
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
03/06/01
IRGP20B120U-E相關(guān)型號PDF文件下載
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