PD - 94620B
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Maximum Junction Temperature rated at 175擄C.
G
IRGIB7B60KD
C
V
CES
= 600V
I
C
= 8.0A, T
C
=100擄C
t
sc
> 10碌s, T
J
=150擄C
E
n-channel
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
V
CE(on)
typ. = 1.8V
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
ISOL
V
GE
P
D
@ T
C
= 25擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
12
8.0
Units
V
A
c
24
24
9.0
6.0
18
2500
鹵20
39
20
-55 to +175
擄C
300 (0.063 in. (1.6mm) from case)
10 lbf路in (1.1 N路m)
W
V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
P
D
@ T
C
= 100擄C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
2.0
Max.
3.8
6.0
鈥撯€撯€?/div>
62
鈥撯€撯€?/div>
Units
擄C/W
g
www.irf.com
1
09/17/03
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