PD-94427D
IRGIB6B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?Low Diode VF.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Ultrasoft Diode Reverse Recovery Characteristics.
鈥?Positive VCE (on) Temperature Coefficient.
G
E
C
V
CES
= 600V
I
C
= 6.0A, T
C
=90擄C
t
sc
> 10碌s, T
J
=175擄C
n-channel
V
CE(on)
typ. = 1.8V
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 100擄C
I
FM
V
ISOL
V
GE
P
D
@ T
C
= 25擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
TO-220
Full-Pak
Max.
600
11
7.0
A
22
22
9.0
6.0
18
2500
鹵20
38
19
-55 to +175
擄C
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
W
V
Units
V
c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
P
D
@ T
C
= 100擄C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
2.0
Max.
3.9
6.0
鈥撯€撯€?/div>
62
鈥撯€撯€?/div>
Units
擄C/W
g
www.irf.com
1
4/14/04
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