PD-9.1419
TARGET
IRGCH70KE
IRGCH70KE IGBT Die in Wafer Form
C
G
E
1200 V
Size 7
Ultra-Fast Speed
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
Test Conditions
3.3V Max.
I
C
= 20A, T
J
= 25擄C, V
GE
= 15V
1200V Min.
T
J
= 25擄C, I
CES
= 250碌A(chǔ), V
GE
= 0V
3.0V Min., 6.0V Max.
V
GE
= V
CE
, T
J
=25擄C, I
C
=250碌A(chǔ)
250 碌A(chǔ) Max.
T
J
= 25擄C, V
CE
= 1200V
鹵
500 nA Max.
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.340" x 0.340"
125mm, with std. < 100 > flat
.015" + / -.003"
01-5153
100 Microns
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
INK DO T
LO CATION
2.39
(.094 )
8.64
(.340 )
8.64
(.340 )
NO TES :
1. ALL DIM ENSIONS ARE S HO W N IN MILLIMET ERS ( INCHES )
2. CONTRO LLING DIMENSION : ( INCH )
3. LETTE R DES IGNA TIO N :
S = S OURCE
S K = SO URCE KE LVIN
G = GA TE
IS = CURRE NT SE NS E
4. DIMENS IO NA L TO LERANCES
BO NDING PADS : < 0.635 TO LERANCE = + /- 0.013
W IDT H
< (.0250 ) T OLERA NCE =+/- (.0005 )
&
> 0.635 TO LERANCE = +/- 0.025
LENG TH
> (.0250 ) TO LERANCE = + /- ( .0010 )
O VERALL DIE
< 1.270 TO LE RA NCE = +/- 0.102
W IDT H
< (.050 ) TO LERANCE = +/- (.004 )
&
> 0.635 T OLERA NCE = +/- 0.203
LENG TH
> ( .050 ) T OLERA NCE = +/- (.008 )
5. UNLESS O THERW IS E NO TED A LL DIE ARE GEN III
EMITTE R
G
1.42
(.056 )
1.35
(.053 )
1
