PD-9.1430
TARGET
IRGCC30FE
IRGCC30FE IGBT Die in Wafer Form
C
G
E
600 V
Size 3
Fast Speed
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
Test Conditions
2.7V Max.
I
C
= 17A, T
J
= 25擄C, V
GE
= 15V
600V Min.
T
J
= 25擄C, I
CES
= 250碌A(chǔ), V
GE
= 0V
3.0V Min., 5.5V Max.
V
GE
= V
CE
, T
J
=25擄C, I
C
=250碌A(chǔ)
250 碌A(chǔ) Max.
T
J
= 25擄C, V
CE
= 600V
鹵
500 nA Max.
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRGBC30F
Cr-Ni-Ag (1 kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.133" x 0.176"
125mm, with std. < 100 > flat
.015" + / -.003"
01-5120
100 Microns
0.25mm Diameter Minimum
Consistant throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
INK DOT
LOCATION
2.34
(.92 )
NOTES :
1. ALL DIM ENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES
BONDING PADS : < 0.635 TOLERANCE = +/- 0.013
WIDTH
< (.0250 ) TOLERANCE =+/- (.0005 )
&
> 0.635 TOLERANCE = +/- 0.025
LENGTH
> (.0250 ) TOLERANCE = +/- (.0010 )
OVERALL DIE
< 1.270 TOLERANCE = +/- 0.102
WIDTH
< (.050 ) TOLERANCE = +/- (.004 )
&
> 0.635 TOLERANCE = +/- 0.203
LENGTH
> (.050 ) TOLERANCE = +/- (.008 )
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
1.12
(.044 )
EM ITTER
4.47
(.176 )
GATE
0.74
(.029 )
2X
3.38
(.133 )
1
