音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRGC5B120UB Datasheet

  • IRGC5B120UB

  • TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP

  • 1頁(yè)

  • ETC

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

PD - 94315
IRGC5B120UB
IRGC5B120UB IGBT Die in Wafer Form
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Features
GEN5 Non Punch Through (NPT) Technology
UltraFast
10碌s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benchmark Efficiency above 20KHz
Optimized for Welding, UPS, and Induction Heating
Rugged with UltraFast Performance
Excellent Current Sharing in Parallel Operation
Qualified for Industrial Market
C
Benefits
G
E
1200 V
I
C(nom)
= 5A
VCE(on) typ. = 4.01V @
I
C(nom)
@ 25
C
UltraFast IGBT
Short Circuit Rated
150mm Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (Min/Max)
Collector-to-Emitter Saturation Voltage
2.54V Min., 3.64V Max.
Collector-to-Emitter Breakdown Voltage
1200V Min.
Gate Threshold Voltage
4.4V Min., 6.0V Max.
Zero Gate Voltage Collector Current
5.0 碌A(chǔ) Max.
Gate-to-Emitter Leakage Current
1.1 碌A(chǔ) Max.
Test Conditions
I
C
= 2.5A, T
J
= 25擄C, V
GE
= 15V
T
J
= 25擄C, I
CES
= 100碌A(chǔ), V
GE
= 0V
V
GE
= V
CE
, T
J
=25擄C, I
C
=125碌A(chǔ)
T
J
= 25擄C, V
CE
= 1200V
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA )
99% Al, 1% Si (4 microns)
0.112" x 0.150"
150mm, with std. < 100 > flat
185 +/- 15 Microns
01-5428
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Die Outline
2.845
[.112]
1.454
[.057]
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
3. LET TER DESIGNAT ION:
S = SOURCE
G = GAT E
SK = SOURCE KELVIN
IS = CURRENT SENS E
E = EMITT ER
3.810
[.150]
0.646
[.025]
EMIT TE R
2.325
[.091]
4. DIMENSIONAL T OLERANCES:
BONDING PADS :
WIDTH
&
LENGTH
G
OVERALL DIE:
WIDTH
0.617
[.024]
&
LENGTH
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLE RANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLE RANCE = + /- [.008]
< 0.635 T OLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] TOLERANCE = + /- [.0010]
10/02/01

IRGC5B120UB相關(guān)型號(hào)PDF文件下載

掃碼下載APP,
一鍵連接廣大的電子世界。

在線人工客服

買(mǎi)家服務(wù):
賣(mài)家服務(wù):
技術(shù)客服:

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào),
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人:

聯(lián)系方式:

按住滑塊,拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見(jiàn),您的參與是維庫(kù)提升服務(wù)的動(dòng)力!意見(jiàn)一經(jīng)采納,將有感恩紅包奉上哦!