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Qualified for Industrial Market
1200 V
I
C(nom)
= 5A
VCE(on) typ. = 2.55V @
I
C(nom)
@ 25
擄
C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
C
G
E
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (Min/Max)
Collector-to-Emitter Saturation Voltage
1.79V Min., 2.22V Max.
Collector-to-Emitter Breakdown Voltage
1200V Min.
Gate Threshold Voltage
4.4V Min., 6.0V Max.
Zero Gate Voltage Collector Current
5.0 碌A(chǔ) Max.
Gate-to-Emitter Leakage Current
鹵
1.1 碌A(chǔ) Max.
Test Conditions
I
C
= 2.5A, T
J
= 25擄C, V
GE
= 15V
T
J
= 25擄C, I
CES
= 100碌A(chǔ), V
GE
= 0V
V
GE
= V
CE
, T
J
=25擄C, I
C
=125碌A(chǔ)
T
J
= 25擄C, V
CE
= 1200V
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA )
99% Al, 1% Si (4 microns)
0.112" x 0.150"
150mm, with std. < 100 > flat
185 +/- 15 Microns
01-5430
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
NOT ES:
1. ALL DIME NSIONS ARE SHOWN IN MILLIME TE RS [INCHES ].
2. CONT ROLLING DIME NSION: [INCH].
3. LE TT ER DE SIGNAT ION:
S = SOURCE
G = GAT E
3.810
[.150]
0.646
[.025]
EMITT ER
2.325
[.091]
SK = S OURCE KELVIN
IS = CURRENTS ENSE
< 0.635 T OLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] TOLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
E = EMIT T ER
Die Outline
2.845
[.112]
1.454
[.057]
4. DIME NSIONAL T OLERANCES:
BONDING PADS:
WIDT H
&
LE NGT H
G
OVERALL DIE:
WIDT H
0.617
[.024]
&
LE NGT H
10/02/01
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