鈥?/div>
I
L(min)
=11.5A @25擄C,L=4.7mH
E m it te r
Electrical Characteristics (Wafer Form)
Parameter
V
CE (on)
BV
CES
V
GE(th)
I
CES
I
GES
T
J
T
STG
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Operating Junction and Storage
Temperature Range
Guaranteed (min, max)
2.65V max
370V min, 430V max
1.2V min, 2.4V max
10碌A(chǔ) max
鹵0.32mA min, 鹵1mA max
Test Conditions @ T
J
= 25擄C
I
C
= 10A, V
GE
= 4.5V
R
G
= 1K ohm, I
CES
= 25mA, V
GE
= 0V
V
GE
= V
CE
, I
C
= 1mA
R
G
= 1K ohm, V
CE
= 300V
V
GE
= +/-10V
-40擄C to 175擄C
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Cr - Ni/V - Ag, (0.1碌m - 0.2碌m - 0.25碌m)
99% Al/1% Si, (4碌m)
0.141" x 0.164"
150mm, with std. < 100 > flat
.015" +/- .003"
01-5467
100碌m
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300擄C
NOT ES :
Die Outline
3.581
[.141]
0.943
[.037]
E
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONTROLLING DIMENS ION: [INCH].
3. LET TER DES IGNAT ION:
0.932
[.037]
S = S OURCE
G = GAT E
S K = S OURCE KELVIN
IS = CURRENT S ENS E
E = EMIT T ER
4. DIMENS IONAL T OLERANCES :
BONDING PADS :
WIDT H
&
LENGT H
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
4.166
[.164]
G
OVERALL DIE:
WIDT H
&
LENGT H
0.562
[.022]
0.762
[.030]
www.irf.com
12/19/00
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