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IRGBC40K-S Datasheet

  • IRGBC40K-S

  • 115.51KB

  • 7頁(yè)

  • ETC

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PD - 9.1134
IRGBC40K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Short circuit rated - 10碌s @ 125擄C, V
GE
= 15V
鈥?Switching-loss rating includes all "tail" losses
鈥?Optimized for high operating frequency (over
5kHz)
See Fig. 1 for Current vs. Frequency
curve
C
Short Circuit Rated
UltraFast Fast IGBT
V
CES
= 600V
G
E
V
CE(sat)
鈮?/div>
3.2V
@V
GE
= 15V, I
C
= 25A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor
control and other applications requiring short circuit withstand capability.
SMD-220
Max.
600
42
25
84
84
10
鹵20
15
160
65
-55 to +150
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
聝
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Units
V
A
碌s
V
mJ
W
擄C
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Wt
Junction-to-Case
Junction-to-Ambient, (PCB mount)**
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
------
Typ.
------
------
------
2 (0.07)
Max.
0.77
40
80
------
Units
擄C/W
g (oz)
**
When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.

IRGBC40K-S相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9....
    IRF [Inter...
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 19A I(C) | TO-2...
    ETC
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17...
    IRF [Inter...
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-2...
    ETC
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25...
    IRF [Inter...
  • 英文版
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-2...
    ETC
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR

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