See Fig. 1 for Current vs. Frequency curve
鈮?/div>
3.0V
@V
GE
= 15V, I
C
= 6.5A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
13
6.5
52
52
鹵20
5
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
CS
R
胃
JA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
0.50
鈥?/div>
2.0 (0.07)
Max.
2.1
鈥?/div>
80
鈥?/div>
Units
擄C/W
g (oz)
Revision 0
C-651
To Order
IRGBC20U 產品屬性
0現(xiàn)貨
停產
-
管件
停產
-
600 V
13 A
-
3V @ 15V，6.5A
60 W
-
標準
-
-
-
-
-55°C ~ 150°C（TJ）
通孔
TO-220-3
TO-220AB
IRGBC20U相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9....
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 19A I(C) | TO-2...
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17...
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-2...
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25...
IRF [Inter...
-
英文版
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-2...
ETC
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR
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