IRGBC20SD2 Datasheet

IC型號：
IRGBC20SD2
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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453.63KB
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10頁
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PD-9.1544

PROVISIONAL

IRGBC20SD2

Standard Speed CoPack

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

鈥?Switching-loss rating includes all 'tail' losses

鈥?HEXFRED

soft ultrafast diodes

鈥?Optimized for line frequency operation (to 400HZ)

CES

= 600V

CE(

SAT

)

鈮?/div>

2.4V

= 15V, I

= 10A

Description

Co-packaged IGBTs are a natural extension of

International Rectifier's well-known IGBT line. They

provide the convenience of an IBGT and an ultrafast

recovery diode in one package, resulting in

substantial benefits to a host of high-voltage, high-

current, motor control, UPS and power supply

applications.

n - ch a n n e l

TO-220AB

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Max.

600

7.0

鹵 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1 N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

Min.

------

-----

------

Typ.

------

0.50

-----

2 (0.07)

Max.

2.1

3.5

------

Units

擄C/W

g (oz)

To Order

Revision 0:9/04/96

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