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IRGB4B60K Datasheet

  • IRGB4B60K

  • INSULATED GATE BIPOLAR TRANSISTOR

  • 13頁

  • IRF

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PD - 94633A
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Maximum Junction Temperature rated at 175擄C.
G
E
IRGB4B60K
IRGS4B60K
IRGSL4B60K
C
V
CES
= 600V
I
C
= 6.8A, T
C
=100擄C
t
sc
> 10碌s, T
J
=150擄C
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 2.1V
TO-220
IRGB4B60K
D
2
Pak
IRGS4B60K
TO-262
IRGSL4B60K
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
12
6.8
Units
V
A
c
24
24
鹵20
63
31
-55 to +175
擄C
300 (0.063 in. (1.6mm) from case)
V
W
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
P
D
@ T
C
= 100擄C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient
Weight
Junction-to-Ambient (PCB Mount, steady state)
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.44
Max.
2.4
鈥撯€撯€?/div>
62
40
鈥撯€撯€?/div>
Units
擄C/W
d
g
www.irf.com
1
8/4/03

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