IRGB420UD2 Datasheet

IC型號：
IRGB420UD2
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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393.48KB
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8頁
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PD - 9.1066

IRGB420UD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

DIODE

Features

鈥?Switching-loss rating includes all "tail" losses

鈥?HEXFRED soft ultrafast diodes

鈥?Optimized for high operating f requency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

UltraFast CoPack IGBT

CES

= 500V

CE(sat)

鈮?/div>

2.9V

= 15V, I

= 7.5A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, motor control, UPS and power supply applications.

TO-220AB

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Max.

500

7.5

7.0

鹵 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1 N鈥)

Units

擄C

Thermal Resistance

Parameter

胃

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

Min.

鈥?

鈥?/div>

鈥?

Typ.

鈥?

0.50

鈥?/div>

2 (0.07)

Max.

2.1

3.5

鈥?

Units

擄C/W

g (oz)

Revision 1

C-617

To Order

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