PD - 9.1680
IRG4ZH50KD
Surface Mountable Short
INSULATED GATE BIPOLAR TRANSISTOR WITH
Circuit Rated UltraFast IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
q
High short circuit rating optimized for motor control, t
sc
= 10
碌s,
V
CC
= 720V, T
J
= 125擄C, V
GE
= 15V
n-channel
C
V
CES
= 1200V
V
CE(
ON
)typ =
2.79V
q
q
q
q
q
q
q
q
q
q
IGBT co-packaged with HEXFRED
TM
ultrafast, ultra-soft
recovery antiparallel diodes for use in bridge configurations
Combines low conduction losses with high switching speed
Low profile low inductance SMD-10 Package
Separated control & Power-connections for easy paralleling
Good coplanarity
Easy solder inspection and cleaning
Highest power density and efficiency available
HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
High input impedance requires low gate drive power
Less noise and interference
G
E(k)
E
@V
GE
= 15V, I
C
= 29A
Benefits
SMD-10
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聦
Clamped Inductive Load Current
聧
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
54
29
108
108
16
108
10
鹵 20
210
83
-55 to +150
Units
V
A
碌s
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.44
6.0(0.21)
Max.
0.60
1.20
鈥?/div>
鈥?/div>
Units
擄C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
Notes:
聦
Repetitive rating: V
GE
= 20V; pulse width limited by maximum
junction temperature (figure 20)
聧
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10碌H, R
G
= 5.0鈩?(figure 19)
聨
Pulse width
鈮?/div>
80碌s; duty factor
鈮?/div>
0.1%.
聫
Pulse width 5.0碌s, single shot.
1
www.irf.com
IRG4ZH50KD相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.3...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF [Inter...
1
2
3
4
5
6
7
8
9
10
